JPS6122032B2 - - Google Patents

Info

Publication number
JPS6122032B2
JPS6122032B2 JP55063297A JP6329780A JPS6122032B2 JP S6122032 B2 JPS6122032 B2 JP S6122032B2 JP 55063297 A JP55063297 A JP 55063297A JP 6329780 A JP6329780 A JP 6329780A JP S6122032 B2 JPS6122032 B2 JP S6122032B2
Authority
JP
Japan
Prior art keywords
electrode
plasma
reaction
reaction volume
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55063297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55154585A (en
Inventor
Jei Gorin Joruju
Teii Hotsugu Josefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CollabRx Inc
Original Assignee
CollabRx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CollabRx Inc filed Critical CollabRx Inc
Publication of JPS55154585A publication Critical patent/JPS55154585A/ja
Publication of JPS6122032B2 publication Critical patent/JPS6122032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP6329780A 1979-05-18 1980-05-13 Plasma reactor Granted JPS55154585A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/040,604 US4209357A (en) 1979-05-18 1979-05-18 Plasma reactor apparatus

Publications (2)

Publication Number Publication Date
JPS55154585A JPS55154585A (en) 1980-12-02
JPS6122032B2 true JPS6122032B2 (en]) 1986-05-29

Family

ID=21911897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6329780A Granted JPS55154585A (en) 1979-05-18 1980-05-13 Plasma reactor

Country Status (4)

Country Link
US (1) US4209357A (en])
EP (1) EP0019370B1 (en])
JP (1) JPS55154585A (en])
DE (1) DE3064737D1 (en])

Families Citing this family (294)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS5623745A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS56105483A (en) * 1980-01-25 1981-08-21 Mitsubishi Electric Corp Dry etching device
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
GB2087315B (en) * 1980-10-14 1984-07-18 Branson Int Plasma Plasma etching of aluminum
DE3039951A1 (de) * 1980-10-23 1982-05-27 Andreas Dipl.-Ing. 6420 Lauterbach Ahlbrandt Vorrichtung zum behandeln der oberflaeche von gegenstaenden durch elektrische spruehentladung
US4341582A (en) * 1980-12-22 1982-07-27 The Perkin-Elmer Corporation Load-lock vacuum chamber
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4369730A (en) * 1981-03-16 1983-01-25 Energy Conversion Devices, Inc. Cathode for generating a plasma
EP0060651B1 (en) * 1981-03-16 1986-07-30 Energy Conversion Devices, Inc. Apparatus including improved cathode for continuous deposition of amorphous material
DE3269040D1 (en) * 1981-04-02 1986-03-27 Perkin Elmer Corp Discharge system for plasma processing
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4384938A (en) * 1982-05-03 1983-05-24 International Business Machines Corporation Reactive ion etching chamber
EP0095200B1 (en) * 1982-05-21 1989-03-15 Tegal Corporation Plasma reactor removeable insert
JPH0666299B2 (ja) * 1983-05-10 1994-08-24 株式会社東芝 プラズマエツチング方法
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
DE3480573D1 (en) * 1984-01-06 1989-12-28 Tegal Corp Single electrode, multiple frequency plasma apparatus
US4547247A (en) * 1984-03-09 1985-10-15 Tegal Corporation Plasma reactor chuck assembly
US4539062A (en) * 1984-03-12 1985-09-03 Tegal Corporation Modular plasma reactor with local atmosphere
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5021138A (en) * 1985-01-17 1991-06-04 Babu Suryadevara V Side source center sink plasma reactor
US4614639A (en) * 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US4637853A (en) * 1985-07-29 1987-01-20 International Business Machines Corporation Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
DE3613181C2 (de) * 1986-04-18 1995-09-07 Siemens Ag Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten
US4810322A (en) * 1986-11-03 1989-03-07 International Business Machines Corporation Anode plate for a parallel-plate reactive ion etching reactor
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
US5006760A (en) * 1987-01-09 1991-04-09 Motorola, Inc. Capacitive feed for plasma reactor
JP2515775B2 (ja) * 1987-02-18 1996-07-10 株式会社日立製作所 表面処理方法および装置
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
DD271776A1 (de) * 1988-05-06 1989-09-13 Elektromat Veb Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken
JPH0225577A (ja) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp 薄膜形成装置
JPH02101740A (ja) * 1988-10-11 1990-04-13 Anelva Corp プラズマエッチング装置
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
DE69024719T2 (de) * 1989-08-14 1996-10-02 Applied Materials Inc Gasverteilungssystem und Verfahren zur Benutzung dieses Systems
JP2574899B2 (ja) * 1989-08-30 1997-01-22 株式会社日立製作所 プラズマエッチング装置
DE4011933C2 (de) * 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
DE4022708A1 (de) * 1990-07-17 1992-04-02 Balzers Hochvakuum Aetz- oder beschichtungsanlagen
US5180467A (en) * 1990-08-08 1993-01-19 Vlsi Technology, Inc. Etching system having simplified diffuser element removal
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JP3252330B2 (ja) * 1991-09-20 2002-02-04 東芝セラミックス株式会社 プラズマエッチング用電極板
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
DE4218196A1 (de) * 1992-06-03 1993-12-09 Fraunhofer Ges Forschung Vorrichtung zur Oberflächenbehandlung von Bauteilen mittels Niederdruckplasma
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
EP0634778A1 (en) * 1993-07-12 1995-01-18 The Boc Group, Inc. Hollow cathode array
KR950020993A (ko) * 1993-12-22 1995-07-26 김광호 반도체 제조장치
US6033480A (en) * 1994-02-23 2000-03-07 Applied Materials, Inc. Wafer edge deposition elimination
JPH07263427A (ja) * 1994-03-25 1995-10-13 Nippon Soken Inc プラズマエッチング方法
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5558843A (en) * 1994-09-01 1996-09-24 Eastman Kodak Company Near atmospheric pressure treatment of polymers using helium discharges
IL116156A0 (en) * 1994-12-05 1996-01-31 Hughes Aircraft Co Cooled gas distribution system for a plasma
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US20050236109A1 (en) * 1995-03-16 2005-10-27 Toshio Masuda Plasma etching apparatus and plasma etching method
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
EP0738788B1 (en) * 1995-04-20 2003-08-13 Ebara Corporation Thin-Film vapor deposition apparatus
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
DE19727857C1 (de) * 1997-06-30 1999-04-29 Fraunhofer Ges Forschung Plasmarektor mit Prallströmung zur Oberflächenbehandlung
US6537418B1 (en) * 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
JP4256587B2 (ja) 1998-04-13 2009-04-22 東京エレクトロン株式会社 低減インピーダンスチャンバ
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6528947B1 (en) * 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
US6576202B1 (en) * 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
WO2002008487A1 (en) * 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
WO2002014810A2 (en) * 2000-08-10 2002-02-21 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
WO2002033729A2 (en) * 2000-10-16 2002-04-25 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
JP3910821B2 (ja) * 2000-10-26 2007-04-25 東京エレクトロン株式会社 基板の処理装置
FR2816726B1 (fr) * 2000-11-16 2006-06-23 Air Liquide Installation dans laquelle est realisee une operation necessitant un controle de l'atmosphere a l'interieur d'une enceinte
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US20040250763A1 (en) * 2002-01-11 2004-12-16 Ovshinsky Stanford R. Fountain cathode for large area plasma deposition
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
JP2005536890A (ja) * 2002-08-26 2005-12-02 東京エレクトロン株式会社 体積削減式プラズマ反応器
US20040053514A1 (en) * 2002-08-27 2004-03-18 Ali Shajii Apparatus for cooling a substrate through thermal conduction in the viscous regime
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
JP2004095770A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置
US6936547B2 (en) * 2002-10-31 2005-08-30 Micron Technology, Inc.. Gas delivery system for deposition processes, and methods of using same
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US20060100824A1 (en) * 2004-10-27 2006-05-11 Tokyo Electron Limited Plasma processing apparatus, abnormal discharge detecting method for the same, program for implementing the method, and storage medium storing the program
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7981810B1 (en) 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
US7915166B1 (en) 2007-02-22 2011-03-29 Novellus Systems, Inc. Diffusion barrier and etch stop films
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
US20090095221A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
CN101919041B (zh) * 2008-01-16 2013-03-27 索绍股份有限公司 衬底固持器,衬底支撑设备,衬底处理设备以及使用所述衬底处理设备的衬底处理方法
JP5179389B2 (ja) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
US7820556B2 (en) * 2008-06-04 2010-10-26 Novellus Systems, Inc. Method for purifying acetylene gas for use in semiconductor processes
US8435608B1 (en) 2008-06-27 2013-05-07 Novellus Systems, Inc. Methods of depositing smooth and conformal ashable hard mask films
US7955990B2 (en) * 2008-12-12 2011-06-07 Novellus Systems, Inc. Method for improved thickness repeatability of PECVD deposited carbon films
JP5221421B2 (ja) * 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP5248370B2 (ja) * 2009-03-10 2013-07-31 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
US9243327B2 (en) * 2009-11-02 2016-01-26 Toray Industries, Inc. Plasma CVD device and method of manufacturing silicon thin film
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP5444044B2 (ja) * 2010-03-02 2014-03-19 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
US8563414B1 (en) 2010-04-23 2013-10-22 Novellus Systems, Inc. Methods for forming conductive carbon films by PECVD
JP5591585B2 (ja) * 2010-05-17 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
JP2013012353A (ja) * 2011-06-28 2013-01-17 Hitachi High-Technologies Corp プラズマ処理装置
KR101234594B1 (ko) * 2011-07-25 2013-02-19 피에스케이 주식회사 배플 및 이를 포함하는 기판 처리 장치
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9088085B2 (en) 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9589799B2 (en) 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US9320387B2 (en) 2013-09-30 2016-04-26 Lam Research Corporation Sulfur doped carbon hard masks
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US11149350B2 (en) 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN109303537A (zh) * 2018-11-26 2019-02-05 珠海格力电器股份有限公司 一种新型洗碗机及其控制方法
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
WO2020243342A1 (en) 2019-05-29 2020-12-03 Lam Research Corporation High selectivity, low stress, and low hydrogen diamond-like carbon hardmasks by high power pulsed low frequency rf
CN110296939A (zh) * 2019-06-11 2019-10-01 江苏大学 一种能提供等离子体环境的原位漫反射红外光谱反应池
CN115938972A (zh) * 2021-08-18 2023-04-07 北京北方华创微电子装备有限公司 半导体腔室及半导体工艺设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816198A (en) * 1969-09-22 1974-06-11 G Babcock Selective plasma etching of organic materials employing photolithographic techniques
JPS5291650A (en) * 1976-01-29 1977-08-02 Toshiba Corp Continuous gas plasma etching apparatus
JPS5378170A (en) * 1976-12-22 1978-07-11 Toshiba Corp Continuous processor for gas plasma etching
IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
JPS5421175A (en) * 1977-07-18 1979-02-17 Tokyo Ouka Kougiyou Kk Improvement of plasma reaction processor
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus

Also Published As

Publication number Publication date
JPS55154585A (en) 1980-12-02
DE3064737D1 (en) 1983-10-13
EP0019370B1 (en) 1983-09-07
EP0019370A1 (en) 1980-11-26
US4209357A (en) 1980-06-24

Similar Documents

Publication Publication Date Title
JPS6122032B2 (en])
US4673456A (en) Microwave apparatus for generating plasma afterglows
US4148705A (en) Gas plasma reactor and process
CN101689492B (zh) 处理基板边缘区域的装置与方法
US6335293B1 (en) Systems and methods for two-sided etch of a semiconductor substrate
US5286344A (en) Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
EP0165400B1 (en) Apparatus for plasma etching
US5015330A (en) Film forming method and film forming device
US7138067B2 (en) Methods and apparatus for tuning a set of plasma processing steps
EP0730532B1 (en) Topology induced plasma enhancement for etched uniformity improvement
US20070107661A1 (en) Methods, systems, and apparatus for uniform chemical-vapor depositions
US20200118830A1 (en) Substrate processing apparatus and substrate processing method
US6511577B1 (en) Reduced impedance chamber
US11217454B2 (en) Plasma processing method and etching apparatus
JPH0621011A (ja) 水素ラジカルを包含する反応性イオンエッチング法
WO2023080969A1 (en) Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual vhf
EP0047395B1 (en) System for reactive ion etching
KR20060135678A (ko) 기판을 처리하기 위한 처리 시스템 및 방법
US5387289A (en) Film uniformity by selective pressure gradient control
KR100256462B1 (ko) 플라즈마 증강 화학 기상 증착 공정
US7578945B2 (en) Method and apparatus for tuning a set of plasma processing steps
US4736087A (en) Plasma stripper with multiple contact point cathode
WO2025090443A1 (en) Dual channel showerhead conductance optimization for uniform radial flow distribution
JP2001189308A (ja) プラズマ処理装置及びプラズマ処理方法
US20010009177A1 (en) Systems and methods for two-sided etch of a semiconductor substrate