US4263088A
(en)
*
|
1979-06-25 |
1981-04-21 |
Motorola, Inc. |
Method for process control of a plasma reaction
|
JPS5623745A
(en)
*
|
1979-08-01 |
1981-03-06 |
Hitachi Ltd |
Plasma etching device
|
US4297162A
(en)
*
|
1979-10-17 |
1981-10-27 |
Texas Instruments Incorporated |
Plasma etching using improved electrode
|
JPS56105483A
(en)
*
|
1980-01-25 |
1981-08-21 |
Mitsubishi Electric Corp |
Dry etching device
|
US4313783A
(en)
*
|
1980-05-19 |
1982-02-02 |
Branson International Plasma Corporation |
Computer controlled system for processing semiconductor wafers
|
US4342901A
(en)
*
|
1980-08-11 |
1982-08-03 |
Eaton Corporation |
Plasma etching electrode
|
US4340461A
(en)
*
|
1980-09-10 |
1982-07-20 |
International Business Machines Corp. |
Modified RIE chamber for uniform silicon etching
|
GB2087315B
(en)
*
|
1980-10-14 |
1984-07-18 |
Branson Int Plasma |
Plasma etching of aluminum
|
DE3039951A1
(de)
*
|
1980-10-23 |
1982-05-27 |
Andreas Dipl.-Ing. 6420 Lauterbach Ahlbrandt |
Vorrichtung zum behandeln der oberflaeche von gegenstaenden durch elektrische spruehentladung
|
US4341582A
(en)
*
|
1980-12-22 |
1982-07-27 |
The Perkin-Elmer Corporation |
Load-lock vacuum chamber
|
US4340462A
(en)
*
|
1981-02-13 |
1982-07-20 |
Lam Research Corporation |
Adjustable electrode plasma processing chamber
|
US4369730A
(en)
*
|
1981-03-16 |
1983-01-25 |
Energy Conversion Devices, Inc. |
Cathode for generating a plasma
|
EP0060651B1
(en)
*
|
1981-03-16 |
1986-07-30 |
Energy Conversion Devices, Inc. |
Apparatus including improved cathode for continuous deposition of amorphous material
|
DE3269040D1
(en)
*
|
1981-04-02 |
1986-03-27 |
Perkin Elmer Corp |
Discharge system for plasma processing
|
US4367114A
(en)
*
|
1981-05-06 |
1983-01-04 |
The Perkin-Elmer Corporation |
High speed plasma etching system
|
US4384938A
(en)
*
|
1982-05-03 |
1983-05-24 |
International Business Machines Corporation |
Reactive ion etching chamber
|
EP0095200B1
(en)
*
|
1982-05-21 |
1989-03-15 |
Tegal Corporation |
Plasma reactor removeable insert
|
JPH0666299B2
(ja)
*
|
1983-05-10 |
1994-08-24 |
株式会社東芝 |
プラズマエツチング方法
|
US4439261A
(en)
*
|
1983-08-26 |
1984-03-27 |
International Business Machines Corporation |
Composite pallet
|
DE3480573D1
(en)
*
|
1984-01-06 |
1989-12-28 |
Tegal Corp |
Single electrode, multiple frequency plasma apparatus
|
US4547247A
(en)
*
|
1984-03-09 |
1985-10-15 |
Tegal Corporation |
Plasma reactor chuck assembly
|
US4539062A
(en)
*
|
1984-03-12 |
1985-09-03 |
Tegal Corporation |
Modular plasma reactor with local atmosphere
|
US4534816A
(en)
*
|
1984-06-22 |
1985-08-13 |
International Business Machines Corporation |
Single wafer plasma etch reactor
|
US4590042A
(en)
*
|
1984-12-24 |
1986-05-20 |
Tegal Corporation |
Plasma reactor having slotted manifold
|
US5021138A
(en)
*
|
1985-01-17 |
1991-06-04 |
Babu Suryadevara V |
Side source center sink plasma reactor
|
US4614639A
(en)
*
|
1985-04-26 |
1986-09-30 |
Tegal Corporation |
Compound flow plasma reactor
|
US4637853A
(en)
*
|
1985-07-29 |
1987-01-20 |
International Business Machines Corporation |
Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
|
US4595484A
(en)
*
|
1985-12-02 |
1986-06-17 |
International Business Machines Corporation |
Reactive ion etching apparatus
|
DE3606959A1
(de)
*
|
1986-03-04 |
1987-09-10 |
Leybold Heraeus Gmbh & Co Kg |
Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
|
DE3613181C2
(de)
*
|
1986-04-18 |
1995-09-07 |
Siemens Ag |
Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten
|
US4810322A
(en)
*
|
1986-11-03 |
1989-03-07 |
International Business Machines Corporation |
Anode plate for a parallel-plate reactive ion etching reactor
|
JPH0834205B2
(ja)
*
|
1986-11-21 |
1996-03-29 |
株式会社東芝 |
ドライエツチング装置
|
US5006760A
(en)
*
|
1987-01-09 |
1991-04-09 |
Motorola, Inc. |
Capacitive feed for plasma reactor
|
JP2515775B2
(ja)
*
|
1987-02-18 |
1996-07-10 |
株式会社日立製作所 |
表面処理方法および装置
|
US4792378A
(en)
*
|
1987-12-15 |
1988-12-20 |
Texas Instruments Incorporated |
Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
|
US4820371A
(en)
*
|
1987-12-15 |
1989-04-11 |
Texas Instruments Incorporated |
Apertured ring for exhausting plasma reactor gases
|
US5031571A
(en)
*
|
1988-02-01 |
1991-07-16 |
Mitsui Toatsu Chemicals, Inc. |
Apparatus for forming a thin film on a substrate
|
DD271776A1
(de)
*
|
1988-05-06 |
1989-09-13 |
Elektromat Veb |
Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken
|
JPH0225577A
(ja)
*
|
1988-07-15 |
1990-01-29 |
Mitsubishi Electric Corp |
薄膜形成装置
|
JPH02101740A
(ja)
*
|
1988-10-11 |
1990-04-13 |
Anelva Corp |
プラズマエッチング装置
|
US5458724A
(en)
*
|
1989-03-08 |
1995-10-17 |
Fsi International, Inc. |
Etch chamber with gas dispersing membrane
|
DE3914065A1
(de)
*
|
1989-04-28 |
1990-10-31 |
Leybold Ag |
Vorrichtung zur durchfuehrung von plasma-aetzverfahren
|
DE69024719T2
(de)
*
|
1989-08-14 |
1996-10-02 |
Applied Materials Inc |
Gasverteilungssystem und Verfahren zur Benutzung dieses Systems
|
JP2574899B2
(ja)
*
|
1989-08-30 |
1997-01-22 |
株式会社日立製作所 |
プラズマエッチング装置
|
DE4011933C2
(de)
*
|
1990-04-12 |
1996-11-21 |
Balzers Hochvakuum |
Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
|
DE4022708A1
(de)
*
|
1990-07-17 |
1992-04-02 |
Balzers Hochvakuum |
Aetz- oder beschichtungsanlagen
|
US5180467A
(en)
*
|
1990-08-08 |
1993-01-19 |
Vlsi Technology, Inc. |
Etching system having simplified diffuser element removal
|
DE4025396A1
(de)
*
|
1990-08-10 |
1992-02-13 |
Leybold Ag |
Einrichtung fuer die herstellung eines plasmas
|
US5074456A
(en)
|
1990-09-18 |
1991-12-24 |
Lam Research Corporation |
Composite electrode for plasma processes
|
JP3252330B2
(ja)
*
|
1991-09-20 |
2002-02-04 |
東芝セラミックス株式会社 |
プラズマエッチング用電極板
|
US6379466B1
(en)
|
1992-01-17 |
2002-04-30 |
Applied Materials, Inc. |
Temperature controlled gas distribution plate
|
DE4218196A1
(de)
*
|
1992-06-03 |
1993-12-09 |
Fraunhofer Ges Forschung |
Vorrichtung zur Oberflächenbehandlung von Bauteilen mittels Niederdruckplasma
|
US5695568A
(en)
*
|
1993-04-05 |
1997-12-09 |
Applied Materials, Inc. |
Chemical vapor deposition chamber
|
EP0634778A1
(en)
*
|
1993-07-12 |
1995-01-18 |
The Boc Group, Inc. |
Hollow cathode array
|
KR950020993A
(ko)
*
|
1993-12-22 |
1995-07-26 |
김광호 |
반도체 제조장치
|
US6033480A
(en)
*
|
1994-02-23 |
2000-03-07 |
Applied Materials, Inc. |
Wafer edge deposition elimination
|
JPH07263427A
(ja)
*
|
1994-03-25 |
1995-10-13 |
Nippon Soken Inc |
プラズマエッチング方法
|
US5441568A
(en)
*
|
1994-07-15 |
1995-08-15 |
Applied Materials, Inc. |
Exhaust baffle for uniform gas flow pattern
|
US5730801A
(en)
*
|
1994-08-23 |
1998-03-24 |
Applied Materials, Inc. |
Compartnetalized substrate processing chamber
|
US5558843A
(en)
*
|
1994-09-01 |
1996-09-24 |
Eastman Kodak Company |
Near atmospheric pressure treatment of polymers using helium discharges
|
IL116156A0
(en)
*
|
1994-12-05 |
1996-01-31 |
Hughes Aircraft Co |
Cooled gas distribution system for a plasma
|
JP3257328B2
(ja)
*
|
1995-03-16 |
2002-02-18 |
株式会社日立製作所 |
プラズマ処理装置及びプラズマ処理方法
|
US20050236109A1
(en)
*
|
1995-03-16 |
2005-10-27 |
Toshio Masuda |
Plasma etching apparatus and plasma etching method
|
JP3360098B2
(ja)
*
|
1995-04-20 |
2002-12-24 |
東京エレクトロン株式会社 |
処理装置のシャワーヘッド構造
|
EP0738788B1
(en)
*
|
1995-04-20 |
2003-08-13 |
Ebara Corporation |
Thin-Film vapor deposition apparatus
|
US5614026A
(en)
*
|
1996-03-29 |
1997-03-25 |
Lam Research Corporation |
Showerhead for uniform distribution of process gas
|
DE19727857C1
(de)
*
|
1997-06-30 |
1999-04-29 |
Fraunhofer Ges Forschung |
Plasmarektor mit Prallströmung zur Oberflächenbehandlung
|
US6537418B1
(en)
*
|
1997-09-19 |
2003-03-25 |
Siemens Aktiengesellschaft |
Spatially uniform gas supply and pump configuration for large wafer diameters
|
US6161500A
(en)
*
|
1997-09-30 |
2000-12-19 |
Tokyo Electron Limited |
Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
|
US6210483B1
(en)
|
1997-12-02 |
2001-04-03 |
Applied Materials, Inc. |
Anti-notch thinning heater
|
JP4256587B2
(ja)
|
1998-04-13 |
2009-04-22 |
東京エレクトロン株式会社 |
低減インピーダンスチャンバ
|
US6148761A
(en)
*
|
1998-06-16 |
2000-11-21 |
Applied Materials, Inc. |
Dual channel gas distribution plate
|
US6499425B1
(en)
*
|
1999-01-22 |
2002-12-31 |
Micron Technology, Inc. |
Quasi-remote plasma processing method and apparatus
|
US6123775A
(en)
*
|
1999-06-30 |
2000-09-26 |
Lam Research Corporation |
Reaction chamber component having improved temperature uniformity
|
US6245192B1
(en)
|
1999-06-30 |
2001-06-12 |
Lam Research Corporation |
Gas distribution apparatus for semiconductor processing
|
US6415736B1
(en)
|
1999-06-30 |
2002-07-09 |
Lam Research Corporation |
Gas distribution apparatus for semiconductor processing
|
US6451157B1
(en)
|
1999-09-23 |
2002-09-17 |
Lam Research Corporation |
Gas distribution apparatus for semiconductor processing
|
US6528947B1
(en)
*
|
1999-12-06 |
2003-03-04 |
E. I. Du Pont De Nemours And Company |
Hollow cathode array for plasma generation
|
US6576202B1
(en)
*
|
2000-04-21 |
2003-06-10 |
Kin-Chung Ray Chiu |
Highly efficient compact capacitance coupled plasma reactor/generator and method
|
WO2002008487A1
(en)
*
|
2000-07-24 |
2002-01-31 |
The University Of Maryland, College Park |
Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
|
WO2002014810A2
(en)
*
|
2000-08-10 |
2002-02-21 |
Tokyo Electron Limited |
Method and apparatus for tuning a plasma reactor chamber
|
WO2002033729A2
(en)
*
|
2000-10-16 |
2002-04-25 |
Tokyo Electron Limited |
Plasma reactor with reduced reaction chamber
|
JP3910821B2
(ja)
*
|
2000-10-26 |
2007-04-25 |
東京エレクトロン株式会社 |
基板の処理装置
|
FR2816726B1
(fr)
*
|
2000-11-16 |
2006-06-23 |
Air Liquide |
Installation dans laquelle est realisee une operation necessitant un controle de l'atmosphere a l'interieur d'une enceinte
|
US6852167B2
(en)
*
|
2001-03-01 |
2005-02-08 |
Micron Technology, Inc. |
Methods, systems, and apparatus for uniform chemical-vapor depositions
|
US6709721B2
(en)
|
2001-03-28 |
2004-03-23 |
Applied Materials Inc. |
Purge heater design and process development for the improvement of low k film properties
|
US20040250763A1
(en)
*
|
2002-01-11 |
2004-12-16 |
Ovshinsky Stanford R. |
Fountain cathode for large area plasma deposition
|
US7160577B2
(en)
*
|
2002-05-02 |
2007-01-09 |
Micron Technology, Inc. |
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
|
JP2005536890A
(ja)
*
|
2002-08-26 |
2005-12-02 |
東京エレクトロン株式会社 |
体積削減式プラズマ反応器
|
US20040053514A1
(en)
*
|
2002-08-27 |
2004-03-18 |
Ali Shajii |
Apparatus for cooling a substrate through thermal conduction in the viscous regime
|
US6963043B2
(en)
*
|
2002-08-28 |
2005-11-08 |
Tokyo Electron Limited |
Asymmetrical focus ring
|
JP2004095770A
(ja)
*
|
2002-08-30 |
2004-03-25 |
Tokyo Electron Ltd |
処理装置
|
US6936547B2
(en)
*
|
2002-10-31 |
2005-08-30 |
Micron Technology, Inc.. |
Gas delivery system for deposition processes, and methods of using same
|
US20050011447A1
(en)
*
|
2003-07-14 |
2005-01-20 |
Tokyo Electron Limited |
Method and apparatus for delivering process gas to a process chamber
|
US20050103265A1
(en)
*
|
2003-11-19 |
2005-05-19 |
Applied Materials, Inc., A Delaware Corporation |
Gas distribution showerhead featuring exhaust apertures
|
US20060051966A1
(en)
*
|
2004-02-26 |
2006-03-09 |
Applied Materials, Inc. |
In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
|
US7780793B2
(en)
*
|
2004-02-26 |
2010-08-24 |
Applied Materials, Inc. |
Passivation layer formation by plasma clean process to reduce native oxide growth
|
US20050230350A1
(en)
*
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
US20060021703A1
(en)
*
|
2004-07-29 |
2006-02-02 |
Applied Materials, Inc. |
Dual gas faceplate for a showerhead in a semiconductor wafer processing system
|
US20060100824A1
(en)
*
|
2004-10-27 |
2006-05-11 |
Tokyo Electron Limited |
Plasma processing apparatus, abnormal discharge detecting method for the same, program for implementing the method, and storage medium storing the program
|
US7552521B2
(en)
|
2004-12-08 |
2009-06-30 |
Tokyo Electron Limited |
Method and apparatus for improved baffle plate
|
US20060130971A1
(en)
*
|
2004-12-21 |
2006-06-22 |
Applied Materials, Inc. |
Apparatus for generating plasma by RF power
|
US7601242B2
(en)
|
2005-01-11 |
2009-10-13 |
Tokyo Electron Limited |
Plasma processing system and baffle assembly for use in plasma processing system
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
KR101218114B1
(ko)
*
|
2005-08-04 |
2013-01-18 |
주성엔지니어링(주) |
플라즈마 식각 장치
|
JP4674512B2
(ja)
*
|
2005-09-12 |
2011-04-20 |
パナソニック株式会社 |
プラズマ処理装置
|
US8664124B2
(en)
|
2005-10-31 |
2014-03-04 |
Novellus Systems, Inc. |
Method for etching organic hardmasks
|
US8110493B1
(en)
|
2005-12-23 |
2012-02-07 |
Novellus Systems, Inc. |
Pulsed PECVD method for modulating hydrogen content in hard mask
|
US7981810B1
(en)
|
2006-06-08 |
2011-07-19 |
Novellus Systems, Inc. |
Methods of depositing highly selective transparent ashable hardmask films
|
US7915166B1
(en)
|
2007-02-22 |
2011-03-29 |
Novellus Systems, Inc. |
Diffusion barrier and etch stop films
|
US8962101B2
(en)
|
2007-08-31 |
2015-02-24 |
Novellus Systems, Inc. |
Methods and apparatus for plasma-based deposition
|
US20090095221A1
(en)
*
|
2007-10-16 |
2009-04-16 |
Alexander Tam |
Multi-gas concentric injection showerhead
|
CN101919041B
(zh)
*
|
2008-01-16 |
2013-03-27 |
索绍股份有限公司 |
衬底固持器,衬底支撑设备,衬底处理设备以及使用所述衬底处理设备的衬底处理方法
|
JP5179389B2
(ja)
*
|
2008-03-19 |
2013-04-10 |
東京エレクトロン株式会社 |
シャワーヘッド及び基板処理装置
|
US7820556B2
(en)
*
|
2008-06-04 |
2010-10-26 |
Novellus Systems, Inc. |
Method for purifying acetylene gas for use in semiconductor processes
|
US8435608B1
(en)
|
2008-06-27 |
2013-05-07 |
Novellus Systems, Inc. |
Methods of depositing smooth and conformal ashable hard mask films
|
US7955990B2
(en)
*
|
2008-12-12 |
2011-06-07 |
Novellus Systems, Inc. |
Method for improved thickness repeatability of PECVD deposited carbon films
|
JP5221421B2
(ja)
*
|
2009-03-10 |
2013-06-26 |
東京エレクトロン株式会社 |
シャワーヘッド及びプラズマ処理装置
|
JP5248370B2
(ja)
*
|
2009-03-10 |
2013-07-31 |
東京エレクトロン株式会社 |
シャワーヘッド及びプラズマ処理装置
|
US9243327B2
(en)
*
|
2009-11-02 |
2016-01-26 |
Toray Industries, Inc. |
Plasma CVD device and method of manufacturing silicon thin film
|
US9111729B2
(en)
|
2009-12-03 |
2015-08-18 |
Lam Research Corporation |
Small plasma chamber systems and methods
|
JP5444044B2
(ja)
*
|
2010-03-02 |
2014-03-19 |
東京エレクトロン株式会社 |
プラズマ処理装置及びシャワーヘッド
|
US8563414B1
(en)
|
2010-04-23 |
2013-10-22 |
Novellus Systems, Inc. |
Methods for forming conductive carbon films by PECVD
|
JP5591585B2
(ja)
*
|
2010-05-17 |
2014-09-17 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US9184028B2
(en)
|
2010-08-04 |
2015-11-10 |
Lam Research Corporation |
Dual plasma volume processing apparatus for neutral/ion flux control
|
US8869742B2
(en)
*
|
2010-08-04 |
2014-10-28 |
Lam Research Corporation |
Plasma processing chamber with dual axial gas injection and exhaust
|
US9967965B2
(en)
|
2010-08-06 |
2018-05-08 |
Lam Research Corporation |
Distributed, concentric multi-zone plasma source systems, methods and apparatus
|
US9155181B2
(en)
|
2010-08-06 |
2015-10-06 |
Lam Research Corporation |
Distributed multi-zone plasma source systems, methods and apparatus
|
US9449793B2
(en)
|
2010-08-06 |
2016-09-20 |
Lam Research Corporation |
Systems, methods and apparatus for choked flow element extraction
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US8771539B2
(en)
|
2011-02-22 |
2014-07-08 |
Applied Materials, Inc. |
Remotely-excited fluorine and water vapor etch
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
JP2013012353A
(ja)
*
|
2011-06-28 |
2013-01-17 |
Hitachi High-Technologies Corp |
プラズマ処理装置
|
KR101234594B1
(ko)
*
|
2011-07-25 |
2013-02-19 |
피에스케이 주식회사 |
배플 및 이를 포함하는 기판 처리 장치
|
US8771536B2
(en)
|
2011-08-01 |
2014-07-08 |
Applied Materials, Inc. |
Dry-etch for silicon-and-carbon-containing films
|
US8679982B2
(en)
|
2011-08-26 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and oxygen
|
US8679983B2
(en)
|
2011-09-01 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
|
US8927390B2
(en)
|
2011-09-26 |
2015-01-06 |
Applied Materials, Inc. |
Intrench profile
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
WO2013070436A1
(en)
|
2011-11-08 |
2013-05-16 |
Applied Materials, Inc. |
Methods of reducing substrate dislocation during gapfill processing
|
US9177762B2
(en)
|
2011-11-16 |
2015-11-03 |
Lam Research Corporation |
System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
|
US10283325B2
(en)
|
2012-10-10 |
2019-05-07 |
Lam Research Corporation |
Distributed multi-zone plasma source systems, methods and apparatus
|
SG195494A1
(en)
|
2012-05-18 |
2013-12-30 |
Novellus Systems Inc |
Carbon deposition-etch-ash gap fill process
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
US9034770B2
(en)
|
2012-09-17 |
2015-05-19 |
Applied Materials, Inc. |
Differential silicon oxide etch
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
US9088085B2
(en)
|
2012-09-21 |
2015-07-21 |
Novellus Systems, Inc. |
High temperature electrode connections
|
US8765574B2
(en)
|
2012-11-09 |
2014-07-01 |
Applied Materials, Inc. |
Dry etch process
|
US8969212B2
(en)
|
2012-11-20 |
2015-03-03 |
Applied Materials, Inc. |
Dry-etch selectivity
|
US9064816B2
(en)
|
2012-11-30 |
2015-06-23 |
Applied Materials, Inc. |
Dry-etch for selective oxidation removal
|
US8980763B2
(en)
|
2012-11-30 |
2015-03-17 |
Applied Materials, Inc. |
Dry-etch for selective tungsten removal
|
US9362133B2
(en)
|
2012-12-14 |
2016-06-07 |
Lam Research Corporation |
Method for forming a mask by etching conformal film on patterned ashable hardmask
|
US9111877B2
(en)
|
2012-12-18 |
2015-08-18 |
Applied Materials, Inc. |
Non-local plasma oxide etch
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9304396B2
(en)
|
2013-02-25 |
2016-04-05 |
Lam Research Corporation |
PECVD films for EUV lithography
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
US8801952B1
(en)
|
2013-03-07 |
2014-08-12 |
Applied Materials, Inc. |
Conformal oxide dry etch
|
US10170282B2
(en)
|
2013-03-08 |
2019-01-01 |
Applied Materials, Inc. |
Insulated semiconductor faceplate designs
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US8895449B1
(en)
|
2013-05-16 |
2014-11-25 |
Applied Materials, Inc. |
Delicate dry clean
|
US9114438B2
(en)
|
2013-05-21 |
2015-08-25 |
Applied Materials, Inc. |
Copper residue chamber clean
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US8956980B1
(en)
|
2013-09-16 |
2015-02-17 |
Applied Materials, Inc. |
Selective etch of silicon nitride
|
US9589799B2
(en)
|
2013-09-30 |
2017-03-07 |
Lam Research Corporation |
High selectivity and low stress carbon hardmask by pulsed low frequency RF power
|
US9320387B2
(en)
|
2013-09-30 |
2016-04-26 |
Lam Research Corporation |
Sulfur doped carbon hard masks
|
US8951429B1
(en)
|
2013-10-29 |
2015-02-10 |
Applied Materials, Inc. |
Tungsten oxide processing
|
US9236265B2
(en)
|
2013-11-04 |
2016-01-12 |
Applied Materials, Inc. |
Silicon germanium processing
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
US9117855B2
(en)
|
2013-12-04 |
2015-08-25 |
Applied Materials, Inc. |
Polarity control for remote plasma
|
US9263278B2
(en)
|
2013-12-17 |
2016-02-16 |
Applied Materials, Inc. |
Dopant etch selectivity control
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
US9190293B2
(en)
|
2013-12-18 |
2015-11-17 |
Applied Materials, Inc. |
Even tungsten etch for high aspect ratio trenches
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9136273B1
(en)
|
2014-03-21 |
2015-09-15 |
Applied Materials, Inc. |
Flash gate air gap
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9847289B2
(en)
|
2014-05-30 |
2017-12-19 |
Applied Materials, Inc. |
Protective via cap for improved interconnect performance
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9159606B1
(en)
|
2014-07-31 |
2015-10-13 |
Applied Materials, Inc. |
Metal air gap
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9165786B1
(en)
|
2014-08-05 |
2015-10-20 |
Applied Materials, Inc. |
Integrated oxide and nitride recess for better channel contact in 3D architectures
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
US9355862B2
(en)
|
2014-09-24 |
2016-05-31 |
Applied Materials, Inc. |
Fluorine-based hardmask removal
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US9299583B1
(en)
|
2014-12-05 |
2016-03-29 |
Applied Materials, Inc. |
Aluminum oxide selective etch
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9373522B1
(en)
|
2015-01-22 |
2016-06-21 |
Applied Mateials, Inc. |
Titanium nitride removal
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
JP7176860B6
(ja)
|
2017-05-17 |
2022-12-16 |
アプライド マテリアルズ インコーポレイテッド |
前駆体の流れを改善する半導体処理チャンバ
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US11149350B2
(en)
|
2018-01-10 |
2021-10-19 |
Asm Ip Holding B.V. |
Shower plate structure for supplying carrier and dry gas
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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|
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